Recently, an article published in "Nikkei Technology Online" analyzed that LEDs using silicon-based GaN substrates, although their performance is comparable to the sapphire substrate LEDs currently occupying the market, there are still problems in mass production. Moreover, the price of sapphire substrates is now falling, and the performance of LEDs formed on sapphire substrates is gradually increasing. For example, PSS (patterned sapphire substrate) has recently been applied on a large scale, greatly increasing the brightness of sapphire substrate LEDs. Therefore, it is more and more difficult for silicon-based GaN substrates to catch up with sapphire substrates.
LEDs formed on a Si substrate should be much less expensive than sapphire substrate LEDs. The price of silicon wafers has been lower than that of sapphire wafers, and this situation will continue in the future, so the cost-cutting effect of using silicon-based GaN substrates can be immediately demonstrated. The most effective way to cut costs is to process epitaxial wafers in a highly automated, depreciated Si-CMOS factory. The LED manufacturing process is fully compatible with CMOS production lines, and it is also important that no additional investment is required.
However, the effect of cost reduction may also be offset by the problem of manufacturing. The problem is that the thermal expansion coefficient and lattice constant of Si and GaN are different. There is thermal mismatch and lattice mismatch between the two, which will cause the epitaxial growth of LED. The wafer is cracked or bent. The dislocation control layer is usually provided on the Si substrate, but it is difficult to perform dislocation control in mass production. Therefore, it is difficult to establish a stable and high-yield mass production process that can be reproduced.
Silicon-based GaN substrate mass production companies are trying to get rid of monopoly
The article pointed out that the only companies in China that sell silicon-based GaN substrate LEDs are China's Jingneng Optoelectronics. In the entire LED market, the technology has a share of less than 1%. Germany's Osram Opto Semiconductors is likely to become the largest newcomer. The company is now using a 150mm wafer (6-inch) pilot line. The performance of silicon-based GaN substrates is gradually approaching sapphire substrates, and it takes an estimated two years to mass production using a 200mm (8-inch) production line.
LEDs formed on a Si substrate should be much less expensive than sapphire substrate LEDs. The price of silicon wafers has been lower than that of sapphire wafers, and this situation will continue in the future, so the cost-cutting effect of using silicon-based GaN substrates can be immediately demonstrated. The most effective way to cut costs is to process epitaxial wafers in a highly automated, depreciated Si-CMOS factory. The LED manufacturing process is fully compatible with CMOS production lines, and it is also important that no additional investment is required.
However, the effect of cost reduction may also be offset by the problem of manufacturing. The problem is that the thermal expansion coefficient and lattice constant of Si and GaN are different. There is thermal mismatch and lattice mismatch between the two, which will cause the epitaxial growth of LED. The wafer is cracked or bent. The dislocation control layer is usually provided on the Si substrate, but it is difficult to perform dislocation control in mass production. Therefore, it is difficult to establish a stable and high-yield mass production process that can be reproduced.
Silicon-based GaN substrate mass production companies are trying to get rid of monopoly
The article pointed out that the only companies in China that sell silicon-based GaN substrate LEDs are China's Jingneng Optoelectronics. In the entire LED market, the technology has a share of less than 1%. Germany's Osram Opto Semiconductors is likely to become the largest newcomer. The company is now using a 150mm wafer (6-inch) pilot line. The performance of silicon-based GaN substrates is gradually approaching sapphire substrates, and it takes an estimated two years to mass production using a 200mm (8-inch) production line.
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