Ai Siqiang Co., Ltd. announced today that its BM 300 system has been successfully put into use at the Japan Industrial Technology Research Institute (AIST). The system was installed in the advanced clean room of the AIST Research Institute in Tsukuba in 2011 and was commissioned by Ai Siqiang's local service support team. The head of the AIST research team, Dr. Shintaro Sato, announced the results of the experimental growth at the Spring Meeting of the American Materials Association on April 10, 2012.
“AIST's successful growth of monolayer graphene on 300mm wafers is an important milestone for us,†said Dr. Ken Teo, Director of Nanotechnology Equipment at Acetron. “BM 300 is the most technologically advanced graphene. The production platform has a gas delivery system that accurately delivers the precursor material, ARGUS in-situ wafer thermal distribution control, highly uniform wafer heater, automated processor, etc. It is highly controllable on 300mm wafers. Repeatable graphene deposition is a necessary step for large-scale wafer-level graphene production and lays the foundation for the development of graphene with unique properties for a new generation of semiconductor facilities."
“AIST's successful growth of monolayer graphene on 300mm wafers is an important milestone for us,†said Dr. Ken Teo, Director of Nanotechnology Equipment at Acetron. “BM 300 is the most technologically advanced graphene. The production platform has a gas delivery system that accurately delivers the precursor material, ARGUS in-situ wafer thermal distribution control, highly uniform wafer heater, automated processor, etc. It is highly controllable on 300mm wafers. Repeatable graphene deposition is a necessary step for large-scale wafer-level graphene production and lays the foundation for the development of graphene with unique properties for a new generation of semiconductor facilities."
Dr. Sato led the AIST team to use the system to deposit a defined number of layers of high quality graphene. This will be the main step in manufacturing low voltage CMOS FET processing techniques, enabling it to operate at voltages below 0.3 volts.
The study was funded by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST), which aims to encourage advanced technology research and development to enhance Japan's international competitiveness and share it. Research results contribute to the well-being of society and people. The FIRST program was approved in 2009 by the General Science and Technology Conference of the Cabinet Office of the Japanese Government and is operated jointly by the Cabinet Office of the Government of Japan and the Japan Society for the Promotion of Science. The wafer processing research was carried out at the Green NanoELectronics Center of the AIST Research Institute's collaborative research team, and it is part of the FIRST program's “Green Nanoelectronics Core Technology R&D†project (core researcher: Dr. Naoki Yokoyama) )a part of. The Green Nanoelectronics Center was established in April 2010 and consists of researchers from academia and industry.
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